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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR L2SA1576A*T1 3 1 BASE 1 2 EMITTER 2 SC-70/SOT- 323 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V EBO Value -50 -60 -6.0 -150 0.2 150 -55 ~+150 Unit V V V mAdc W C C IC PC Tj T stg DEVICE MARKING L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Collector-Emitter Breakdown Voltage (IC = -1 mA) Emitter-Base Breakdown Voltage (IE = - 50 A) Collector-Base Breakdown Voltage (IC = - 50 A) Collector Cutoff Current (VCB = - 60 V) Emitter cutoff current (VEB = - 6 V) Collector-emitter saturation voltage (IC/ IB = - 50 mA / - 5m A) DC current transfer ratio (V CE = - 6 V, I C= -1mA) Transition frequency (V CE = - 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = - 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE fT C ob -- 120 -- -- -- -- 140 4.0 -0.5 560 -- 5.0 V -- MHz pF Symbol V (BR)CEO Min - 50 -6 - 60 -- -- Typ -- -- -- -- -- Max -- -- -- - 0.1 - 0.1 Unit V V V A A V (BR)EBO V (BR)CBO I CBO I EBO h FE values are classified as follows: hFE * Q 120~270 R 180~390 S 270~560 L2SA1576A*T1-1/4 LESHAN RADIO COMPANY, LTD. L2SA1576A*T1 Fig.1 Grounded emitter propagation characteristics -50 Fig.2 Grounded emitter output characteristics( ) -10 -35.0 T A = 25C -31.5 -28.0 -24.5 -20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) T A = 100C 25C - 40C VCE= -10 V -8 -10 -50 -6 -21.0 -17.5 -2 -1 -4 -14.0 -10.5 -0.5 -2 -7.0 -3.5A -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 0 -0.4 -0.8 -1.2 -1.6 I B =0 -2.0 V BE , BASE TO EMITTER VOLTAGE(V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) -100 Fig.4 DC current gain vs. collector current ( ) 500 T A = 25C I C, COLLECTOR CURRENT (mA) -80 T A = 25C h FE, DC CURRENT GAIN -60 500 450 400 350 300 VCE= -5 V -3V -1V 200 -250 -200 -40 -150 -100 100 -20 -50 A I B =0 0 -1 -2 -3 -4 -5 50 0 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 V CE , COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 500 -1 T A = 100C 25C T A = 25C -0.5 h FE, DC CURRENT GAIN -40C 200 -0.2 I C /I B = 50 -0.1 100 20 10 50 -0.05 VCE= - 6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) L2SA1576A*T1-2/4 LESHAN RADIO COMPANY, LTD. L2SA1576A*T1 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) -1 Fig.8 Gain bandwidth product vs. emitter current 1000 I C /I B = 10 f r , TRANSITION FREQUENCY(MHz) 500 T A = 25C V CE = -12V -0.5 -0.2 200 -0.1 T A = 100C 25C -40C 100 -0.05 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) I E, EMITTER CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) 20 C ib 10 T A = 25C f =1MHz I E = 0A I C = 0A C ob 5 2 -0.5 -1 -2 -5 -10 -20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) L2SA1576A*T1-3/4 LESHAN RADIO COMPANY, LTD. L2SA1576A*T1 SC-70/SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L DIM 3 S 1 2 B D G C 0.05 (0.002) N K J H A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017REF 0.026BSC 0.028REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425REF 0.650BSC 0.700REF 2.00 2.40 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm L2SA1576A*T1-4/4 |
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